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cc2630 swrs177 ? february 2015 cc2630 simplelink ? 6lowpan / zigbee ? wireless mcu 1 device overview 1.1 features 1 ? seamless integration with the simplelink ? microcontroller cc2590 and cc2592 range extenders ? powerful arm ? cortex ? -m3 ? pin compatible with the simplelink cc13xx in ? eembc coremark ? score: 142 4-mm 4-mm and 5-mm 5-mm qfn ? up to 48-mhz clock speed packages ? 128kb of in-system programmable flash ? low power ? 8-kb sram for cache ? wide supply voltage range ? 20-kb ultra-low leakage sram ? normal operation: 1.8 to 3.8 v ? 2-pin cjtag and jtag debugging ? external regulator mode: 1.7 to 1.95 v ? supports over-the-air upgrade (ota) ? active-mode rx: 5.9 ma ? ultra-low power sensor controller ? active-mode tx at 0 dbm: 6.1 ma ? can run autonomous from the rest of the ? active-mode tx at +5 dbm: 9.1 ma system ? active-mode mcu: 61 a/mhz ? 16-bit architecture ? active-mode mcu: 48.5 coremark/ma ? 2-kb ultra-low leakage sram for code and ? active-mode sensor controller: 8.2 a/mhz data ? standby: 1 a (rtc running and ram/cpu ? efficient code size architecture, placing drivers, retention) ieee 802.15.4 mac, and bootloader in rom ? shutdown: 100 na (wake-up on external ? rohs-compliant packages events) ? 4-mm 4-mm rsm qfn32 (10 gpios) ? rf section ? 5-mm 5-mm rhb qfn32 (15 gpios) ? 2.4 ghz rf transceiver compatible with ieee ? 7-mm x 7-mm rgz qfn48 (31 gpios) 802.15.4 phy and mac ? peripherals ? excellent receiver sensitivity ( ? 100 dbm), ? all digital peripheral pins can be routed to any selectivity, and blocking performance gpio ? programmable output power up to +5 dbm ? 4 general-purpose timer modules (8 16-bit or ? single-ended or differential rf interface 4 32-bit timer, pwm each) ? suitable for systems targeting compliance with ? 12-bit adc, 200-ksamples/s, 8-channel analog worldwide radio frequency regulations mux ? etsi en 300 328 (europe) ? continuous time comparator ? en 300 440 class 2 (europe) ? ultra-low power analog comparator ? fcc cfr47 part 15 (us) ? programmable current source ? arib std-t66 (japan) ? uart ? tools and development environment ? 2x ssi (spi, w, ti) ? full-feature and low-cost development kits ? i 2 c ? multiple reference designs for different rf ? i2s configurations ? real-time clock (rtc) ? packet sniffer pc software ? aes-128 security module ? sensor controller studio ? true random number generator (trng) ? smartrf ? studio ? 10, 15, or 31 gpios, depending on package ? smartrf flash programmer 2 option ? iar embedded workbench ? for arm ? support for 8 capacitive sensing buttons ? code composer studio ? ? integrated temperature sensor ? external system ? on-chip internal dc-dc converter ? very few external components 1 an important notice at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. production data. productfolder sample &buy technical documents tools & software support &community
cc2630 swrs177 ? february 2015 www.ti.com 1.2 applications ? home and building automation ? wireless sensor networks ? lighting control ? energy harvesting / battery less sensors and actuators ? alarm and security ? smart grid ? electronic shelf labeling ? proximity tags 1.3 description the cc2630 is a wireless mcu targeting zigbee ? and 6lowpan applications. the device is a member of the cc26xx family of cost-effective, ultra-low power, 2.4-ghz rf devices. very low active rf and mcu current, and low-power mode current consumption provides excellent battery lifetime and allows operation on small coin cell batteries and in energy-harvesting applications. the cc2630 contains a 32-bit arm cortex-m3 running at 48-mhz as the main processor and a rich peripheral feature set, including a unique ultra-low power sensor controller, ideal for interfacing external sensors and/or collecting analog and digital data autonomously while the rest of the system is in sleep mode. this makes the cc2630 ideal for battery powered and energy harvesting end nodes in zigbee / 6lowpan networks. the ieee 802.15.4 mac is embedded into rom and are partly running on a separate arm cortex ? -m0 processor. this architecture improves overall system performance and power consumption and frees up flash memory for the application. the zigbee stack is available free of charge from www.ti.com . device information (1) part number package body size cc2630f128rgz rgz (qfn48) 7.00 mm 7.00 mm cc2630f128rhb rhb (qfn32) 5.00 mm 5.00 mm cc2630f128rsm rsm (qfn32) 4.00 mm 4.00 mm (1) for more information, see section 9 , mechanical packaging and orderable information . 2 device overview copyright ? 2015, texas instruments incorporated submit documentation feedback product folder links: cc2630
cc2630 www.ti.com swrs177 ? february 2015 1.4 functional block diagram section 1.4 shows a block diagram for the cc2630. figure 1-1. block diagram copyright ? 2015, texas instruments incorporated device overview 3 submit documentation feedback product folder links: cc2630
cc2630 swrs177 ? february 2015 www.ti.com table of contents 1 device overview ......................................... 1 5.15 battery monitor ...................................... 18 1.1 features .............................................. 1 5.16 continuous time comparator ....................... 19 1.2 applications ........................................... 2 5.17 low-power clocked comparator ................... 19 1.3 description ............................................ 2 5.18 programmable current source ..................... 19 1.4 functional block diagram ............................ 3 5.19 dc characteristics .................................. 20 2 revision history ......................................... 5 5.20 control input ac characteristics .................... 20 3 device comparison ..................................... 6 5.21 synchronous serial interface (ssi) characteristics . 20 4 terminal configuration and functions .............. 7 5.22 typical characteristics .............................. 21 4.1 pin diagram ? rsm package ........................ 7 6 detailed description ................................... 24 4.2 signal descriptions ? rsm package ................. 7 6.1 overview ............................................ 24 4.3 pin diagram ? rhb package ........................ 8 6.2 main cpu ........................................... 24 4.4 signal descriptions ? rhb package ................. 9 6.3 rf core ............................................. 24 4.5 pin diagram ? rgz package ....................... 10 6.4 sensor controller ................................... 25 4.6 signal descriptions ? rgz package ................ 10 6.5 memory .............................................. 26 5 specifications ........................................... 12 6.6 debug ............................................... 26 5.1 absolute maximum ratings ......................... 12 6.7 power management ................................. 27 5.2 esd ratings ........................................ 12 6.8 clock systems ...................................... 28 5.3 recommended operating conditions ............... 12 6.9 general peripherals and modules .................. 28 5.4 thermal characteristics ............................. 13 6.10 system architecture ................................. 29 5.5 electrical characteristics ............................ 14 7 application circuit ..................................... 30 5.6 general characteristics ............................. 15 8 device and documentation support ............... 32 5.7 ieee 802.15.4 (offset q-psk dsss, 250 kbps) ? 8.1 device support ...................................... 32 rx ................................................... 15 8.2 documentation support ............................. 34 5.8 ieee 802.15.4 (offset q-psk dsss, 250 kbps) ? 8.3 additional information ............................... 34 tx ................................................... 16 8.4 trademarks .......................................... 35 5.9 24-mhz crystal oscillator (xosc_hf) ............. 17 8.5 electrostatic discharge caution ..................... 35 5.10 32.768-khz crystal oscillator (xosc_lf) .......... 17 8.6 export control notice ............................... 35 5.11 48-mhz rc oscillator (rcosc_hf) ............... 17 8.7 glossary ............................................. 35 5.12 32-khz rc oscillator (rcosc_lf) ................. 17 9 mechanical packaging and orderable 5.13 adc characteristics ................................. 18 information .............................................. 36 5.14 temperature sensor ................................ 18 9.1 packaging information .............................. 36 4 table of contents copyright ? 2015, texas instruments incorporated submit documentation feedback product folder links: cc2630
cc2630 www.ti.com swrs177 ? february 2015 2 revision history note: page numbers for previous revisions may differ from page numbers in the current version. date revision notes february 2015 * initial release copyright ? 2015, texas instruments incorporated revision history 5 submit documentation feedback product folder links: cc2630
cc2630 swrs177 ? february 2015 www.ti.com 3 device comparison table 3-1. device family overview device phy support flash (kb) ram (kb) gpio package (1) cc2650f128xxx multi-protocol (2) 128 20 31, 15, 10 rgz, rhb, rsm cc2640f128xxx bluetooth low energy 128 20 31, 15, 10 rgz, rhb, rsm cc2630f128xxx ieee 802.15.4 zigbee(/6lowpan) 128 20 31, 15, 10 rgz, rhb, rsm cc2620f128xxx ieee 802.15.4 (rf4ce) 128 20 31, 15, 10 rgz, rhb, rsm (1) package designator replaces the xxx in device name to form a complete device name, rgz is 7-mm x 7-mm qfn48, rhb is 5-mm x 5- mm qfn32, and rsm is 4-mm x 4-mm qfn32. (2) the cc2650 supports all phys and can be reflashed to run all the supported standards. 6 device comparison copyright ? 2015, texas instruments incorporated submit documentation feedback product folder links: cc2630
cc2630 www.ti.com swrs177 ? february 2015 4 terminal configuration and functions note i/o pins marked in bold have high drive capabilities. i/o pins marked in italics have analog capabilities. 4.1 pin diagram ? rsm package figure 4-1. rsm (4 mm 4 mm) pinout, 0.4-mm pitch 4.2 signal descriptions ? rsm package table 4-1. signal descriptions ? rsm package pin name pin pin type description rf_p 1 rf i/o positive rf input signal to lna during rx positive rf output signal to pa during tx rf_n 2 rf i/o negative rf input signal to lna during rx negative rf output signal to pa during tx rx_tx 4 rf i/o optional bias pin for the rf lna vdds 27 power 1.8 v to 3.8 v main chip supply (1) vdds2 11 power 1.8 v to 3.8 v gpio supply (1) vdds_dcdc 19 power 1.8 v to 3.8 v dc/dc supply. tie to ground for external regulator mode (1.7 v to 1.95 v operation) vddr 28 power 1.7 v to 1.95 v supply, typically connect to output of internal dc/dc (2) (3) vddr_rf 32 power 1.7 v to 1.95 v supply, typically connect to output of internal dc/dc (4) (3) dcoupl 12 power 1.27 v regulated digital-supply decoupling capacitor (3) vss 3, 7, 17, 20, 29 power ground (1) see section 8.2 , technical reference manual for more details. (2) if internal dc/dc is not used, this pin is supplied internally from the main ldo. (3) do not supply external circuitry from this pin. (4) if internal dc/dc is not used, this pin must be connected to vddr for supply from the main ldo. copyright ? 2015, texas instruments incorporated terminal configuration and functions 7 submit documentation feedback product folder links: cc2630 cc26xx 28 29 27 30 qfn32 4x4 rsm 21 20 22 19 18 13 12 14 11 4 5 3 6 7 26 15 25 16 31 10 32 9 23 2 24 1 17 8 dio_6 vss dio_5 reset_n vss vdds_dcdc dcdc_sw dio_7 vddr_rf x24m_n x24m_p vss vddr dio_9 vdds dio_8 dio_1 jtag_tmsc dio_2 dcoupl vdds2 jtag_tckc dio_3 dio_4 rf_p rf_n vss x32k_q2 vss dio_0 rx_tx x32k_q1
cc2630 swrs177 ? february 2015 www.ti.com table 4-1. signal descriptions ? rsm package (continued) pin name pin pin type description dcdc_sw 18 power output from internal dc/dc (1) . tie to ground for external regulator mode (1.7 v to 1.95 v operation) egp power ground ? exposed ground pad reset_n 21 digital input reset, active-low. no internal pullup dio_0 8 digital i/o gpio, sensor controller, high drive capability dio_1 9 digital i/o gpio, sensor controller, high drive capability dio_2 10 digital i/o gpio, sensor controller, high drive capability dio_3 15 digital i/o gpio, high drive capability, jtag_tdo dio_4 16 digital i/o gpio, high drive capability, jtag_tdi dio_5 22 digital/analog i/o gpio, sensor controller, analog dio_6 23 digital/analog i/o gpio, sensor controller, analog dio_7 24 digital/analog i/o gpio, sensor controller, analog dio_8 25 digital/analog i/o gpio, sensor controller, analog dio_9 26 digital/analog i/o gpio, sensor controller, analog jtag_tmsc 13 digital i/o jtag tmsc jtag_tckc 14 digital i/o jtag tckc x32k_q1 5 analog i/o 32 khz crystal oscillator pin 1 x32k_q2 6 analog i/o 32 khz crystal oscillator pin 2 x24m_n 30 analog i/o 24 mhz crystal oscillator pin 1 x24m_p 31 analog i/o 24 mhz crystal oscillator pin 2 4.3 pin diagram ? rhb package figure 4-2. rhb (5 mm 5 mm) pinout, 0.5-mm pitch 8 terminal configuration and functions copyright ? 2015, texas instruments incorporated submit documentation feedback product folder links: cc2630 cc26xx 28 29 27 30 qfn32 5x5 rhb 21 20 22 19 18 13 12 14 11 4 5 3 6 7 26 15 25 16 31 10 32 9 23 2 24 1 17 8 dio_10 dio_7 dio_9 dio_8 dcdc_sw reset_n vdds_dcdc dio_11 vddr_rf x24m_n x24m_p vddr vdds dio_13 dio_14 dio_12 dio_3 jtag_tmsc dio_4 dcoupl vdds2 jtag_tckc dio_5 dio_6 rf_p rf_n rx_tx dio_0 dio_1 dio_2 x32k_q1 x32k_q2
cc2630 www.ti.com swrs177 ? february 2015 4.4 signal descriptions ? rhb package table 4-2. signal descriptions ? rhb package pin name pin pin type description rf_p 1 rf i/o positive rf input signal to lna during rx positive rf output signal to pa during tx rf_n 2 rf i/o negative rf input signal to lna during rx negative rf output signal to pa during tx rx_tx 3 rf i/o optional bias pin for the rf lna vdds 28 power 1.8 v to 3.8 v main chip supply (1) vdds2 11 power 1.8 v to 3.8 v gpio supply (1) vdds_dcdc 18 power 1.8 v to 3.8 v dc/dc supply vddr 29 power 1.7 v to 1.95 v supply, typically connect to output of internal dc/dc (2) (3) vddr_rf 32 power 1.7 v to 1.95 v supply, typically connect to output of internal dc/dc (4) (3) dcoupl 12 power 1.27 v regulated digital-supply decoupling (3) dcdc_sw 17 power output from internal dc/dc (1) egp power ground ? exposed ground pad reset_n 19 digital input reset, active-low. no internal pullup dio_0 6 digital i/o gpio, sensor controller dio_1 7 digital i/o gpio, sensor controller dio_2 8 digital i/o gpio, sensor controller, high drive capability dio_3 9 digital i/o gpio, sensor controller, high drive capability dio_4 10 digital i/o gpio, sensor controller, high drive capability dio_5 15 digital i/o gpio, high drive capability, jtag_tdo dio_6 16 digital i/o gpio, high drive capability, jtag_tdi dio_7 20 digital/analog i/o gpio, sensor controller, analog dio_8 21 digital/analog i/o gpio, sensor controller, analog dio_9 22 digital/analog i/o gpio, sensor controller, analog dio_10 23 digital/analog i/o gpio, sensor controller, analog dio_11 24 digital/analog i/o gpio, sensor controller, analog dio_12 25 digital/analog i/o gpio, sensor controller, analog dio_13 26 digital/analog i/o gpio, sensor controller, analog dio_14 27 digital/analog i/o gpio, sensor controller, analog jtag_tmsc 13 digital i/o jtag tmsc, high drive capability jtag_tckc 14 digital i/o jtag tckc x32k_q1 4 analog i/o 32 khz crystal oscillator pin 1 x32k_q2 5 analog i/o 32 khz crystal oscillator pin 2 x24m_n 30 analog i/o 24 mhz crystal oscillator pin 1 x24m_p 31 analog i/o 24 mhz crystal oscillator pin 2 (1) see section 8.2 , technical reference manual for more details. (2) if internal dc/dc is not used, this pin is supplied internally from the main ldo. (3) do not supply external circuitry from this pin. (4) if internal dc/dc is not used, this pin must be connected to vddr for supply from the main ldo. copyright ? 2015, texas instruments incorporated terminal configuration and functions 9 submit documentation feedback product folder links: cc2630
cc2630 swrs177 ? february 2015 www.ti.com 4.5 pin diagram ? rgz package figure 4-3. rgz (7 mm 7 mm) pinout, 0.5-mm pitch 4.6 signal descriptions ? rgz package table 4-3. signal descriptions ? rgz package pin name pin pin type description rf_p 1 rf i/o positive rf input signal to lna during rx positive rf output signal to pa during tx rf_n 2 rf i/o negative rf input signal to lna during rx negative rf output signal to pa during tx vdds 44 power 1.8 v to 3.8 v main chip supply (1) vdds2 13 power 1.8 v to 3.8 v dio supply (1) vdds3 22 power 1.8 v to 3.8 v dio supply (1) vdds_dcdc 34 power 1.8 v to 3.8 v dc/dc supply vddr 45 power 1.7 v to 1.95 v supply, typically connect to output of internal dc/dc (2) (3) vddr_rf 48 power 1.7 v to 1.95 v supply, typically connect to output of internal dc/dc (4) (3) dcoupl 23 power 1.27 v regulated digital-supply decoupling capacitor (3) egp power ground ? exposed ground pad dcdc_sw 33 power output from internal dc/dc (1) reset_n 35 digital input reset, active-low. no internal pullup dio_0 5 digital i/o gpio, sensor controller (1) see section 8.2 , technical reference manual for more details. (2) if internal dc/dc is not used, this pin is supplied internally from the main ldo. (3) do not supply external circuitry from this pin. (4) if internal dc/dc is not used, this pin must be connected to vddr for supply from the main ldo. 10 terminal configuration and functions copyright ? 2015, texas instruments incorporated submit documentation feedback product folder links: cc2630 40 39 dio_25 38 dio_24 37 21 22 23 24 dcdc_sw 33 dio_18 34 reset_n 35 dio_23 36 x32k_q2 4 x32k_q1 3 rf_n 2 rf_p 1 dio_22 32 dio_21 31 dio_20 30 dio_19 29 dio_0 5 dio_1 6 dio_2 7 8 28 27 26 jtag_tckc 25 9 10 11 12 cc26xx qfn48 7x7 rgz 41 42 43 44 20 dio_15 19 dio_14 18 17 vddr 45 46 47 vddr_rf 48 16 15 14 13 dio_17 dio_16 vdds_dcdc dio_26 dio_12 dio_13 vdds2 dio_11 dio_10 dio_5 dio_6 dio_7 dio_3 dio_4 x24m_p x24m_n dio_8 dio_9 dio_28 vdds3 dcoupl jtag_tmsc dio_29 dio_30 dio_27 vdds
cc2630 www.ti.com swrs177 ? february 2015 table 4-3. signal descriptions ? rgz package (continued) pin name pin pin type description dio_1 6 digital i/o gpio, sensor controller dio_2 7 digital i/o gpio, sensor controller dio_3 8 digital i/o gpio, sensor controller dio_4 9 digital i/o gpio, sensor controller dio_5 10 digital i/o gpio, sensor controller, high drive capability dio_6 11 digital i/o gpio, sensor controller, high drive capability dio_7 12 digital i/o gpio, sensor controller, high drive capability dio_8 14 digital i/o gpio dio_9 15 digital i/o gpio dio_10 16 digital i/o gpio dio_11 17 digital i/o gpio dio_12 18 digital i/o gpio dio_13 19 digital i/o gpio dio_14 20 digital i/o gpio dio_15 21 digital i/o gpio dio_16 26 digital i/o gpio, jtag_tdo, high drive capability dio_17 27 digital i/o gpio, jtag_tdi, high drive capability dio_18 28 digital i/o gpio dio_19 29 digital i/o gpio dio_20 30 digital i/o gpio dio_21 31 digital i/o gpio dio_22 32 digital i/o gpio dio_23 36 digital/analog i/o gpio, sensor controller, analog dio_24 37 digital/analog i/o gpio, sensor controller, analog dio_25 38 digital/analog i/o gpio, sensor controller, analog dio_26 39 digital/analog i/o gpio, sensor controller, analog dio_27 40 digital/analog i/o gpio, sensor controller, analog dio_28 41 digital/analog i/o gpio, sensor controller, analog dio_29 42 digital/analog i/o gpio, sensor controller, analog dio_30 43 digital/analog i/o gpio, sensor controller, analog jtag_tmsc 24 digital i/o jtag tmsc, high drive capability jtag_tckc 25 digital i/o jtag tckc x32k_q1 3 analog i/o 32 khz crystal oscillator pin 1 x32k_q2 4 analog i/o 32 khz crystal oscillator pin 2 x24m_n 46 analog i/o 24 mhz crystal oscillator pin 1 x24m_p 47 analog i/o 24 mhz crystal oscillator pin 2 copyright ? 2015, texas instruments incorporated terminal configuration and functions 11 submit documentation feedback product folder links: cc2630
cc2630 swrs177 ? february 2015 www.ti.com 5 specifications 5.1 absolute maximum ratings (1) (2) [over operating free-air temperature range (unless otherwise noted)] under no circumstances must the absolute maximum ratings be violated. stress exceeding one or more of the limiting values may cause permanent damage to the device. min max unit vddr supplied by internal dc/dc regulator or supply voltage, vdds (3) ? 0.3 4.1 v internal gldo external regulator mode (vdds and vddr pins supply voltage, vdds (3) and vddr ? 0.3 2.25 v connected on pcb) vdds+0.3, max voltage on any digital pin (4) ? 0.3 v 4.1 voltage on crystal oscillator pins, vddr+0.3, max x32k_q1, x32k_q2, x24m_n and ? 0.3 v 2.25 x24m_p internal fixed or relative reference, voltage ? 0.3 vdds scaling enabled internal fixed reference, voltage scaling disabled ? 0.3 1.49 internal relative reference, voltage scaling voltage on adc input (v in ) ? 0.3 vdds / 2.9 v disabled min (v ref 2.9, external reference, voltage scaling enabled ? 0.3 vdds) external reference, voltage scaling disabled ? 0.3 v ref voltage on external adc reference ? 0.3 1.6 v (v ref ) input rf level +5 dbm t stg storage temperature ? 40 150 c (1) all voltage values are with respect to vdds, unless otherwise noted. (2) stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. these are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions is not implied. exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. (3) vdds2 and vdds3 needs to be at the same potential as vdds. (4) including analog capable dio. 5.2 esd ratings value unit human body model (hbm), per ansi/esda/jedec all pins 2500 js001 (1) electrostatic discharge v esd v (esd) performance: rf pins 750 charged device model (cdm), per jesd22-c101 (2) non-rf pins 750 (1) jedec document jep155 states that 500-v hbm allows safe manufacturing with a standard esd control process. (2) jedec document jep157 states that 250-v cdm allows safe manufacturing with a standard esd control process. 5.3 recommended operating conditions the operating conditions for cc2630 are listed below. min max unit ambient temperature range ? 40 85 c operating supply voltage for operation in 1.8 v systems (vdds and vddr), external (vdds and vddr pins connected on pcb, internal dc/dc 1.7 1.95 v regulator mode cannot be used) operating supply voltage for operation in battery-powered and 3.3 v systems 1.8 3.8 v (vdds) (internal dc/dc can be used to minimize power consumption) rising supply voltage slew rate 0 100 mv/us falling supply voltage slew rate 0 20 mv/us 12 specifications copyright ? 2015, texas instruments incorporated submit documentation feedback product folder links: cc2630
cc2630 www.ti.com swrs177 ? february 2015 recommended operating conditions (continued) the operating conditions for cc2630 are listed below. min max unit falling supply voltage slew rate, 3 mv/us with low-power flash settings (1) positive temperature gradient in no limitation for negative temperature gradient, or outside 5 c/s standby (2) standby mode (1) for smaller coin cell batteries, with high worst-case end-of-life equivalent source resistance, a 22uf vdds input capacitor (see figure 7- 1 ) should be used to ensure compliance with this slew rate. (2) applications using rcosc_lf as sleep timer must also consider the drift in frequency caused by a change in temperature. see section 5.12 5.4 thermal characteristics name description rsm ( c/w) (1) rhb ( c/w) (1) rgz ( c/w) (1) ja junction-to-ambient thermal resistance 36.9 32.8 29.6 jctop junction-to-case (top) thermal resistance 30.3 24.0 15.7 jb junction-to-board thermal resistance 7.6 6.8 6.2 jt junction-to-top characterization parameter 0.4 0.3 0.3 jb junction-to-board characterization parameter 7.4 6.8 6.2 jcbot junction-to-case (bottom) thermal resistance 2.1 1.9 1.9 (1) c/w = degrees celsius per watt. copyright ? 2015, texas instruments incorporated specifications 13 submit documentation feedback product folder links: cc2630
cc2630 swrs177 ? february 2015 www.ti.com 5.5 electrical characteristics measured on texas instruments cc2650em-5xd reference design with t c =25 c, v dds = 3.0 v with internal dc-dc converter, unless otherwise noted. parameter test conditions min typ max unit i core core current consumption reset. reset_n pin asserted 100 na shutdown. no clocks running, no retention 150 standby. with rtc, cpu, ram and (partial) register 1 retention. rcosc_lf standby. with rtc, cpu, ram and (partial) register 1.2 retention. xosc_lf standby. with cache, rtc, cpu, ram and (partial) a 2.5 register retention. rcosc_lf standby. with cache, rtc, cpu, ram and (partial) 2.7 register retention. xosc_lf idle. supply systems and ram powered. 550 1.45 ma + active. core running coremark 31 a/mhz radio rx (1) 5.9 radio rx (2) 6.1 ma radio tx, 0 dbm output power (1) 6.1 radio tx, 5 dbm output power (2) 9.1 i peri peripheral current consumption (adds to core current i core for each peripheral unit activated) (3) peripheral power domain delta current with domain enabled 20 a serial power domain delta current with domain enabled 13 a delta current with power domain enabled, clock rf core 237 a enabled, rf core idle dma delta current with clock enabled, module idle 130 a timers delta current with clock enabled, module idle 113 a i 2 c delta current with clock enabled, module idle 12 a i2s delta current with clock enabled, module idle 36 a ssi delta current with clock enabled, module idle 93 a uart delta current with clock enabled, module idle 164 a (1) single-ended rf mode optimized for size and power consumption. measured on cc2650em-4xs (2) differential rf mode optimized for rf performance. measured on cc2650em-5xd (3) i peri not supported in standby and shutdown 14 specifications copyright ? 2015, texas instruments incorporated submit documentation feedback product folder links: cc2630
cc2630 www.ti.com swrs177 ? february 2015 5.6 general characteristics measured on texas instruments cc2650em-5xd reference design with t c =25 c, v dds = 3.0 v, unless otherwise noted. parameter test conditions min typ max unit wake-up and timing idle - > active 14 s standby - > active 151 s shutdown - > active 1015 s flash memory supported flash erase cycles before 100 k cycles failure flash page/sector erase current average delta current 12.6 ma flash page/sector erase time (1) 8 ms flash page/sector size 4 kb flash write current average delta current, 4 bytes at a time 8.15 ma flash write time (1) 4 bytes at a time 8 s (1) this number is dependent on flash aging and will increase over time and erase cycles 5.7 ieee 802.15.4 (offset q-psk dsss, 250 kbps) ? rx measured on texas instruments cc2650em-5xd reference design with t c =25 c, v dds = 3.0 v, unless otherwise noted. parameter test conditions min typ max unit differential mode. measured at the cc2650em-5xd receiver sensitivity ? 100 dbm sma connector, per = 1% single-ended mode. measured on cc2650em-4xs, receiver sensitivity ? 97 dbm at the sma connector, per = 1% measured at the cc2650em-5xd sma connector, receiver saturation +4 dbm per = 1% wanted signal at -82 dbm, modulated interferer at adjacent channel rejection 39 db 5 mhz, per = 1% wanted signal at -82 dbm, modulated interferer at alternate channel rejection 52 db 10 mhz, per = 1% wanted signal at -82 dbm, undesired signal is ieee channel rejection, 15 mhz or 802.15.4 modulated channel, stepped through all 57 db more channels 2405 to 2480 mhz, per = 1% blocking/desensitization, wanted signal at -97 dbm (3 db above the 64 db 5 mhz from upper band edge sensitivity level), cw jammer, per = 1% blocking/desensitization, wanted signal at -97 dbm (3 db above the 64 db 10 mhz from upper band edge sensitivity level), cw jammer, per = 1% blocking/desensitization, wanted signal at -97 dbm (3 db above the 65 db 20 mhz from upper band edge sensitivity level), cw jammer, per = 1% blocking/desensitization, wanted signal at -97 dbm (3 db above the 68 db 50 mhz from upper band edge sensitivity level), cw jammer, per = 1% blocking/desensitization, wanted signal at -97 dbm (3 db above the 63 db -5 mhz from lower band edge sensitivity level), cw jammer, per = 1% blocking/desensitization, wanted signal at -97 dbm (3 db above the 63 db -10 mhz from lower band edge sensitivity level), cw jammer, per = 1% blocking/desensitization, wanted signal at -97 dbm (3 db above the 65 db -20 mhz from lower band edge sensitivity level), cw jammer, per = 1% blocking/desensitization, wanted signalat -97 dbm (3 db above the 67 db -50 mhz from lower band edge sensitivity level), cw jammer, per = 1% conducted measurement in a 50 ? single-ended spurious emissions, 30 to 1000 load. suitable for systems targeting compliance with ? 71 dbm mhz en 300 328, en 300 440 class 2, fcc cfr47, part 15 and arib std-t-66 copyright ? 2015, texas instruments incorporated specifications 15 submit documentation feedback product folder links: cc2630
cc2630 swrs177 ? february 2015 www.ti.com ieee 802.15.4 (offset q-psk dsss, 250 kbps) ? rx (continued) measured on texas instruments cc2650em-5xd reference design with t c =25 c, v dds = 3.0 v, unless otherwise noted. parameter test conditions min typ max unit conducted measurement in a 50 ? single-ended spurious emissions, 1 to 12.75 load. suitable for systems targeting compliance with ? 62 dbm ghz en 300 328, en 300 440 class 2, fcc cfr47, part 15 and arib std-t-66 difference between center frequency of the received frequency error tolerance > 200 ppm rf signal and local oscillator frequency rssi dynamic range 100 db rssi accuracy 4 db 5.8 ieee 802.15.4 (offset q-psk dsss, 250 kbps) ? tx measured on texas instruments cc2650em-5xd reference design with t c =25 c, v dds = 3.0 v, unless otherwise noted. parameter test conditions min typ max unit delivered to a single-ended 50 load through a output power, highest setting +5 dbm balun measured on cc2650em-4xs, delivered to a output power, highest setting +2 dbm single-ended 50- load delivered to a single-ended 50 load through a output power, lowest setting ? 21 dbm balun error vector magnitude at maximum output power 2% f < 1 ghz, outside restricted bands ? 43 f < 1 ghz, restricted bands etsi ? 65 dbm spurious emission conducted f < 1 ghz, restricted bands fcc ? 76 measurement f > 1 ghz, including harmonics ? 46 suitable for systems targeting compliance with worldwide radio-frequency regulations etsi en 300 328 and en 300 440 class 2 (europe), fcc cfr47 part 15 (us), and arib std-t66 (japan) 16 specifications copyright ? 2015, texas instruments incorporated submit documentation feedback product folder links: cc2630
cc2630 www.ti.com swrs177 ? february 2015 5.9 24-mhz crystal oscillator (xosc_hf) (1) measured on texas instruments cc2650em-5xd reference design with t c =25 c, v dds = 3.0 v, unless otherwise noted. parameter test conditions min typ max unit crystal frequency 24 mhz crystal frequency tolerance (2) -40 40 ppm esr equivalent series resistance 20 60 ? cl crystal load capacitance 5 9 pf start-up time (3) 150 s (1) probing or otherwise stopping the xtal while the dc-dc converter is enabled may cause permanent damage to the device. (2) includes initial tolerance of the crystal, drift over temperature, aging and frequency pulling due to incorrect load capacitance. as per ieee 802.15.4 specification (3) kick-started based on a temperature and aging compensated rcosc_hf using precharge injection 5.10 32.768-khz crystal oscillator (xosc_lf) measured on texas instruments cc2650em-5xd reference design with t c =25 c, v dds = 3.0 v, unless otherwise noted. parameter test conditions min typ max unit crystal frequency 32.768 khz esr equivalent series resistance 30 100 k ? cl crystal load capacitance 6 12 pf 5.11 48-mhz rc oscillator (rcosc_hf) measured on texas instruments cc2650em-5xd reference design with t c =25 c, v dds = 3.0 v, unless otherwise noted. parameter test conditions min typ max unit frequency 48 mhz uncalibrated frequency accuracy 1% calibrated frequency accuracy (1) 0.25% start-up time 5 s (1) accuracy relatively to the calibration source (xosc_hf). 5.12 32-khz rc oscillator (rcosc_lf) measured on texas instruments cc2650em-5xd reference design with t c =25 c, v dds = 3.0 v, unless otherwise noted. parameter test conditions min typ max unit calibrated frequency 32.8 khz temperature coefficient 50 ppm/ c copyright ? 2015, texas instruments incorporated specifications 17 submit documentation feedback product folder links: cc2630
cc2630 swrs177 ? february 2015 www.ti.com 5.13 adc characteristics (1) t c =25 c, v dds = 3.0 v and voltage scaling enabled, unless otherwise noted. parameter test conditions min typ max unit input voltage range 0 v dds v resolution 12 bits sample rate 200 ksps offset internal 4.3 v equivalent reference (2) 2 lsb gain error internal 4.3 v equivalent reference (2) 2.4 lsb dnl (3) differential nonlinearity > ? 1 lsb inl (4) integral nonlinearity 3 lsb internal 4.3 v equivalent reference (2) , 200 ksps, 9.6 khz input tone 9.8 vdds as reference, 200 ksps, 9.6 khz input tone 10 enob effective number of bits bits internal 1.44 v reference, voltage scaling disabled, 32 samples 11.1 average, 200 ksps, 300 hz input tone internal 4.3 v equivalent reference (2) , 200 ksps, 9.6 khz input tone ? 65 vdds as reference, 200 ksps, 9.6 khz input tone ? 69 thd total harmonic distortion db internal 1.44 v reference, voltage scaling disabled, 32 samples ? 71 average, 200 ksps, 300 hz input tone internal 4.3 v equivalent reference (2) , 200 ksps, 9.6 khz input tone 60 sina signal-to-noise and vdds as reference, 200 ksps, 9.6 khz input tone 63 d / db distortion ratio internal 1.44 v reference, voltage scaling disabled, 32 samples 69 sndr average, 200 ksps, 300 hz input tone internal 4.3 v equivalent reference (2) , 200 ksps, 9.6 khz input tone 67 spurious-free dynamic vdds as reference, 200 ksps, 9.6 khz input tone 72 sfdr db range internal 1.44 v reference, voltage scaling disabled, 32 samples 73 average, 200 ksps, 300 hz input tone serial conversion, time-to-output, 24 mhz clock 50 clock- conversion time cycles current consumption internal 4.3 v equivalent reference (2) 0.66 ma current consumption vdds as reference 0.75 ma internal reference voltage internal 4.3 v equivalent reference (2) 1.44 v internal reference voltage vdds as reference vdds / v 2.82 (1) using ieee std 1241 ? -2010 for terminology and test methods. (2) input signal scaled down internally before conversion, as if voltage range was 0 to 4.3v (3) no missing codes. positive dnl typically varies from +0.3 to +3.5 depending on device, see figure 5-13 (4) for a typical example, see figure 5-14 5.14 temperature sensor measured on texas instruments cc2650em-5xd reference design with t c =25 c, v dds = 3.0 v, unless otherwise noted. parameter test conditions min typ max unit resolution 4 c range ? 40 85 c accuracy 5 c supply voltage coefficient (1) 3.2 c/v (1) automatically compensated when using supplied driver libraries. 5.15 battery monitor measured on texas instruments cc2650em-5xd reference design with t c =25 c, v dds = 3.0 v, unless otherwise noted. parameter test conditions min typ max unit resolution 50 mv range 1.8 3.8 v 18 specifications copyright ? 2015, texas instruments incorporated submit documentation feedback product folder links: cc2630
cc2630 www.ti.com swrs177 ? february 2015 battery monitor (continued) measured on texas instruments cc2650em-5xd reference design with t c =25 c, v dds = 3.0 v, unless otherwise noted. parameter test conditions min typ max unit accuracy 13 mv 5.16 continuous time comparator t c =25 c, v dds = 3.0 v, unless otherwise noted. parameter test conditions min typ max unit input voltage range 0 v dds v external reference voltage 0 v dds v internal reference voltage dcoupl as reference 1.27 v offset 3 mv hysteresis < 2 mv decision time step from -10mv to +10mv 0.72 s current consumption when enabled (1) 8.6 a (1) additionally the bias module needs to be enabled when running in standby mode. 5.17 low-power clocked comparator t c =25 c, v dds = 3.0 v, unless otherwise noted. parameter test conditions min typ max unit input voltage range 0 v dds v clock frequency 32 khz internal reference voltage, vdds / 2 1.49 - 1.51 v internal reference voltage, vdds / 3 1.01 - 1.03 v internal reference voltage, vdds / 4 0.78 - 0.79 v internal reference voltage, dcoupl / 1 1.25 - 1.28 v internal reference voltage, dcoupl / 2 0.63 - 0.65 v internal reference voltage, dcoupl / 3 0.42 - 0.44 v internal reference voltage, dcoupl / 4 0.33 - 0.34 v offset < 2 mv hysteresis < 5 mv decision time step from -50mv to +50mv < 1 clock-cycle current consumption when enabled 362 na 5.18 programmable current source t c =25 c, v dds = 3.0 v, unless otherwise noted. parameter test conditions min typ max unit current source programmable output range 0.25 - a 20 resolution 0.25 a including current source at maximum current consumption (1) 23 a programmable output (1) additionally the bias module needs to be enabled when running in standby mode. copyright ? 2015, texas instruments incorporated specifications 19 submit documentation feedback product folder links: cc2630
cc2630 swrs177 ? february 2015 www.ti.com 5.19 dc characteristics parameter test conditions min typ max unit t a = 25 c, v dds = 1.8 v gpio voh at 8ma load iocurr=2, high drive gpios only 1.54 v gpio vol at 8ma load iocurr=2, high drive gpios only 0.26 v gpio voh at 4ma load iocurr=1 1.58 v gpio vol at 4ma load iocurr=1 0.21 v gpio pullup current input mode, pullup enabled, vpad=0v 71.7 a gpio pulldown current input mode, pulldown enabled, vpad=vdds 21.1 a gpio high/low input transition, no hysteresis ih=0, transition between reading 0 and reading 1 0.88 v gpio low-to-high input transition, with hysteresis ih=1, transition voltage for input read as 0 1 1.07 v gpio high-to-low input transition, with hysteresis ih=1, transition voltage for input read as 1 0 0.74 v gpio input hysteresis ih=1, difference between 0 1 and 1 0 points 0.33 v t a = 25 c, v dds = 3.0 v gpio voh at 8ma load iocurr=2, high drive gpios only 2.68 v gpio vol at 8ma load iocurr=2, high drive gpios only 0.33 v gpio voh at 4ma load iocurr=1 2.72 v gpio vol at 4ma load iocurr=1 0.28 v t a = 25 c, v dds = 3.8 v gpio pullup current input mode, pullup enabled, vpad=0v 277 a gpio pulldown current input mode, pulldown enabled, vpad=vdds 113 a gpio high/low input transition, no hysteresis ih=0, transition between reading 0 and reading 1 1.67 v gpio low-to-high input transition, with hysteresis ih=1, transition voltage for input read as 0 1 1.94 v gpio high-to-low input transition, with hysteresis ih=1, transition voltage for input read as 1 0 1.54 v gpio input hysteresis ih=1, difference between 0 1 and 1 0 points 0.4 v 5.20 control input ac characteristics t a = -40 c to 85 c, v dds = 1.7 v to 3.8 v, unless otherwise noted. parameter test conditions min typ max unit reset_n low duration 1 s 5.21 synchronous serial interface (ssi) characteristics t c =25 c, v dds = 3.0 v, unless otherwise noted. parameter parameter parameter name min typ max unit no. s1 t clk_per ssiclk cycle time 12 65024 system clocks 20 specifications copyright ? 2015, texas instruments incorporated submit documentation feedback product folder links: cc2630
cc2630 www.ti.com swrs177 ? february 2015 5.22 typical characteristics figure 5-2. output power vs temperature figure 5-1. ieee 802.15.4 sensitivity vs temperature figure 5-4. rx mode current consumption vs temperature figure 5-3. transmit current consumption vs. supply voltage (vdds) figure 5-6. tx output power vs supply voltage (vdds) figure 5-5. tx mode current consumption vs temperature copyright ? 2015, texas instruments incorporated specifications 21 submit documentation feedback product folder links: cc2630 vdds (v) tx current (ma) 1.8 2 2.2 2.4 2.6 2.8 3 3.2 3.4 3.6 3.8 4 5 6 7 8 9 10 11 12 13 14 15 16 d015 4xs 2-dbm setting 5xd 5-dbm setting temperature ( q c) rx current (ma) -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 5.6 5.8 6 6.2 6.4 6.6 6.8 7 d001 5xd rx current 4xs rx current temperature ( q c) sensitivity (dbm) -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 -103 -102 -101 -100 -99 -98 -97 -96 -95 sensitivity 4xs sensitivity 5xd temperature ( q c) output power (dbm) -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 0 1 2 3 4 5 6 4xs 2-dbm setting 5xd 5-dbm setting vdds (v) output power (dbm) 1.8 2.3 2.8 3.3 3.8 0 1 2 3 4 5 6 d003 5xd 5 dbm setting 4xs 2 dbm setting temperature ( q c) tx current (ma) -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 0 2 4 6 8 10 12 d002 5xd 5 dbm setting 4xs 2 dbm setting
cc2630 swrs177 ? february 2015 www.ti.com figure 5-7. ieee 802.15.4 sensitivity vs supply voltage (vdds) figure 5-8. active mode current consumption vs temperature figure 5-9. active mode current consumption vs supply figure 5-10. standby mode current consumption with rcosc voltage (vdds) rtc vs temperature figure 5-11. effective number of bits vs input frequency figure 5-12. soc adc output vs supply voltage (fixed input, (internal reference, no scaling) internal reference, no scaling) 22 specifications copyright ? 2015, texas instruments incorporated submit documentation feedback product folder links: cc2630 input frequency (hz) effective number of bits 200 300 500 1000 2000 5000 10000 20000 100000 9.4 9.6 9.8 10 10.2 10.4 10.6 10.8 11 11.2 11.4 d009 fs= 200 khz, no averaging fs= 200 khz, 32 samples averaging vdds (v) adc code 1.8 2.3 2.8 3.3 3.8 1004.8 1005 1005.2 1005.4 1005.6 1005.8 1006 1006.2 1006.4 d012 vdds (v) current consumption (ma) 1.8 2.3 2.8 3.3 3.8 2 2.5 3 3.5 4 4.5 5 d007 active mode current temperature ( q c) current (ua) -20 -10 0 10 20 30 40 50 60 70 80 0 0.5 1 1.5 2 2.5 3 3.5 4 d008 standby mode current vdds (v) sensitivity (dbm) 1.8 2.3 2.8 3.3 3.8 -101 -100 -99 -98 -97 -96 -95 d005 ieee 802.15.4 5xd sensitivity ieee 802.15.4 4xs sensitivity temperature ( q c) active mode current consumpstion (ma) -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 2.85 2.9 2.95 3 3.05 3.1 d006 active mode current
cc2630 www.ti.com swrs177 ? february 2015 figure 5-13. dnl vs. adc code (internal reference, no scaling) figure 5-14. inl vs. adc code (internal reference, no scaling) figure 5-15. soc adc output vs temperature (fixed input, figure 5-16. enob vs sampling frequency internal reference, no scaling) (input frequency = fs/10) copyright ? 2015, texas instruments incorporated specifications 23 submit documentation feedback product folder links: cc2630 adc code inl 0 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 2400 2600 2800 3000 3200 3400 3600 3800 4000 4200 -4 -3 -2 -1 0 1 2 3 d011 adc code dnl 0 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 2400 2600 2800 3000 3200 3400 3600 3800 4000 4200 -1.5 -1 -0.5 0 0.5 1 1.5 2 2.5 3 3.5 d010 input frequency (hz) effective number of bits 200 300 500 1000 2000 5000 10000 20000 100000 9.4 9.6 9.8 10 10.2 10.4 10.6 10.8 11 11.2 11.4 d009 fs= 200 khz, no averaging fs= 200 khz, 32 samples averaging temperature ( q c) adc code -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 1004.5 1005 1005.5 1006 1006.5 1007 1007.5 d013
cc2630 swrs177 ? february 2015 www.ti.com 6 detailed description 6.1 overview section 1.4 shows a block diagram of the core modules of the cc26xx product family. 6.2 main cpu the simplelink cc2630 wireless mcu contains an arm cortex-m3 (cm3) 32-bit cpu, which runs the application and the higher layers of the protocol stack. the cm3 processor provides a high-performance, low-cost platform that meets the system requirements of minimal memory implementation, and low-power consumption, while delivering outstanding computational performance and exceptional system response to interrupts. cm3 features include: ? 32-bit arm cortex-m3 architecture optimized for small-footprint embedded applications ? outstanding processing performance combined with fast interrupt handling ? arm thumb ? -2 mixed 16- and 32 bit instruction set delivers the high performance expected of a 32 bit arm core in a compact memory size usually associated with 8- and 16-bit devices, typically in the range of a few kilobytes of memory for microcontroller-class applications: ? single-cycle multiply instruction and hardware divide ? atomic bit manipulation (bit-banding), delivering maximum memory use and streamlined peripheral control ? unaligned data access, enabling data to be efficiently packed into memory ? fast code execution permits slower processor clock or increases sleep mode time ? harvard architecture characterized by separate buses for instruction and data ? efficient processor core, system, and memories ? hardware division and fast digital-signal-processing oriented multiply accumulate ? saturating arithmetic for signal processing ? deterministic, high-performance interrupt handling for time-critical applications ? enhanced system debug with extensive breakpoint and trace capabilities ? serial wire trace reduces the number of pins required for debugging and tracing ? migration from the arm7 ? processor family for better performance and power efficiency ? optimized for single-cycle flash memory use ? ultra-low power consumption with integrated sleep modes ? 1.25 dmips per mhz 6.3 rf core the rf core contains an arm cortex m0 that interfaces the analog rf and base-band circuitries, handles data to and from the system side, and assembles the information bits in a given packet structure. the rf core offers a high level, command-based api to the main cpu. the rf core is capable of autonomously handling the time-critical aspects of the radio protocols ( 802.15.4 zigbee) thus offloading the main cpu and leaving more resources for the user application. the rf core has a dedicated 4-kb sram block and runs initially from separate rom memory. the arm cortex m0 is not programmable by customers. 24 detailed description copyright ? 2015, texas instruments incorporated submit documentation feedback product folder links: cc2630
cc2630 www.ti.com swrs177 ? february 2015 6.4 sensor controller the sensor controller contains circuitry that can be selectively enabled in standby mode. the peripherals in this domain may be controlled by the sensor controller engine which is a proprietary power-optimized cpu. this cpu can read and monitor sensors or perform other tasks autonomously, thereby significantly reducing power consumption and offloading the main cm3 cpu. the sensor controller is set up using a pc-based configuration tool, called sensor controller studio, and typical use cases may be (but are not limited to): ? analog sensors using integrated adc ? digital sensors using gpios and bit-banged i 2 c and/or spi ? uart communication for sensor reading or debugging ? capacitive sensing ? waveform generation ? pulse counting ? keyboard scan ? quadrature decoder for polling rotation sensors ? oscillator calibration the peripherals in the sensor controller include the following: ? the low-power clocked comparator can be used to wake the device from any state in which the comparator is active. a configurable internal reference can be used in conjunction with the comparator. the output of the comparator can also be used to trigger an interrupt or the adc. ? capacitive sensing functionality is implemented through the use of a constant current source, a time- to-digital converter, and a comparator. the continuous time comparator in this block can also be used as a higher-accuracy alternative to the low-power clocked comparator. the sensor controller will take care of baseline tracking, hysteresis, filtering and other related functions. ? the adc is a 12-bit, 200 ksamples/s adc with 8 inputs and a built-in voltage reference. the adc can be triggered by many different sources, including timers, i/o pins, software, the analog comparator, and the rtc. ? the sensor controller also includes a spi/i 2 c digital interface. ? the analog modules can be connected to up to 8 different gpios. the peripherals in the sensor controller can also be controlled from the main application processor. copyright ? 2015, texas instruments incorporated detailed description 25 submit documentation feedback product folder links: cc2630
cc2630 swrs177 ? february 2015 www.ti.com table 6-1. gpios connected to the sensor controller (1) analog capable 7x7 rgz dio# 5x5 rhb dio# 4x4 rsm dio# y 30 14 y 29 13 y 28 12 y 27 11 9 y 26 9 8 y 25 10 7 y 24 8 6 y 23 7 5 n 7 4 2 n 6 3 1 n 5 2 0 n 4 1 n 3 0 n 2 n 1 n 0 (1) depending on the package size, up to 16 pins can be connected to the sensor controller. up to 8 of them can be connected to analog modules 6.5 memory the flash memory provides nonvolatile storage for code and data. the flash memory is in-system programmable. the sram (static ram) can be used for both storage of data and execution of code and is split into two 4-kb blocks and two 6-kb blocks. retention of the ram contents in standby mode can be enabled or disabled individually for each block to minimize power consumption. in addition, if flash cache is disabled, the 8-kb cache can be used as a general-purpose ram. the rom provides preprogrammed embedded ti rtos kernel, driverlib and lower layer protocol stack software ( 802.15.4 mac). it also contains a bootloader that can be used to reprogram the device using spi or uart. 6.6 debug the on-chip debug support is done through a dedicated cjtag (ieee 1149.7) or jtag (ieee 1149.1) interface. 26 detailed description copyright ? 2015, texas instruments incorporated submit documentation feedback product folder links: cc2630
cc2630 www.ti.com swrs177 ? february 2015 6.7 power management to minimize power consumption, the cc2630 supports a number of power modes and power management features (see table 6-2 ). table 6-2. power modes software configurable power modes mode reset pin held active idle standby shutdown cpu active off off off off flash on available off off off sram on on on off off radio available available off off off supply system on on duty cycled off off current 1.45 ma + 31 a/mhz 550 a 1 a 0.15 a 0.1 a wake-up time to cpu active (1) ? 14 s 151 s 1015 s 1015 s register retention full full partial no no sram retention full full full no no xosc_hf or xosc_hf or high-speed clock off off off rcosc_hf rcosc_hf xosc_lf or xosc_lf or xosc_lf or low-speed clock off off rcosc_lf rcosc_lf rcosc_lf peripherals available available off off off sensor controller available available available off off wake-up on rtc available available available off off wake-up on pin edge available available available available off wake-up on reset pin available available available available available (1) not including rtos overhead in active mode, the application cm3 cpu is actively executing code. active mode provides normal operation of the processor and all of the peripherals that are currently enabled. the system clock can be any available clock source (see table 6-2 ). in idle mode, all active peripherals can be clocked, but the application cpu core and memory are not clocked and no code is executed. any interrupt event will bring the processor back into active mode. in standby, only the aon (always-on) domain is active. an external wake event, rtc event, or sensor controller event is required to bring the device back to active. mcu peripherals with retention do not need to be reconfigured when waking up again and the cpu will continue execution from where it went into standby. all gpios are latched in standby. in shutdown, the device is entirely turned off, including the aon domain and sensor controller, i/os are latched with the value they had before entering shutdown. a change of state on any i/o pin defined as a "wake from shutdown pin" will wake up the device and function as a reset trigger. the cpu can differentiate between reset in this way and reset-by-reset pin or power-on-reset by reading the reset status register. the only state retained in this mode is the latched i/o state and the flash memory contents. the sensor controller is an autonomous processor that can control the peripherals in the sensor controller independently of the main cpu. this means that the main cpu does not have to wake up to for example execute an adc sample or poll a digital sensor over spi, and saves both current and wake-up time that would otherwise be wasted. the sensor controller studio enables the user to configure the sensor controller and choose which peripherals are controlled and which conditions will wake up the main cpu. copyright ? 2015, texas instruments incorporated detailed description 27 submit documentation feedback product folder links: cc2630
cc2630 swrs177 ? february 2015 www.ti.com 6.8 clock systems the cc2630 supports two external and two internal clock sources. a 24 mhz crystal is required as the frequency reference for the radio. this signal is doubled internally to create a 48 mhz clock. the 32 khz crystal is optional. the low-speed crystal oscillator is designed for use with a 32 khz watch- type crystal. the internal high-speed oscillator (48 mhz) can be used as a clock source for the cpu subsystem. the internal low-speed oscillator (32.768 khz) can be used as a reference if the low-power crystal oscillator is not used. the 32 khz clock source can be used as external clocking reference through gpio. 6.9 general peripherals and modules the i/o controller controls the digital i/o pins and contains multiplexer circuitry to allow a set of peripherals to be assigned to i/o pins in a flexible manner. all digital i/os are interrupt and wake-up capable, have a programmable pullup and pulldown function and can generate an interrupt on a negative or positive edge (configurable). when configured as an output, pins can function as either push-pull or open-drain. five gpios have high drive capabilities (marked in bold in section 4 ). the ssis are synchronous serial interfaces that are compatible with spi, microwire, and texas instruments synchronous serial interfaces. the ssis support both spi master and slave up to 4 mhz. the uart implements a universal asynchronous receiver/transmitter function. it supports flexible baud- rate generation up to a maximum of 3 mbps . timer 0 is a general-purpose timer module (gptm), which provides two 16-bit timers. the gptm can be configured to operate as a single 32-bit timer, dual 16-bit timers or as a pwm module. timer 1, timer 2, and timer 3 are also gptms. each of these timers is functionally equivalent to timer 0. in addition to these four timers, the rf core has its own timer to handle timing for rf protocols; the rf timer can be synchronized to the rtc. the i 2 c interface is used to communicate with devices compatible with the i 2 c standard. the i 2 c interface is capable of 100 khz and 400 khz operation, and can serve as both i 2 c master and i 2 c slave. the trng module provides a true, nondeterministic noise source for the purpose of generating keys, initialization vectors (ivs), and other random number requirements. the trng is built on 24 ring oscillators that create unpredictable output to feed a complex nonlinear combinatorial circuit. the watchdog timer is used to regain control if the system fails due to a software error after an external device fails to respond as expected. the watchdog timer can generate an interrupt or a reset when a predefined time-out value is reached. the device includes a direct memory access ( dma) controller. the dma controller provides a way to offload data transfer tasks from the cm3 cpu, allowing for more efficient use of the processor and the available bus bandwidth. the dma controller can perform transfer between memory and peripherals. the dma controller has dedicated channels for each supported on-chip module and can be programmed to automatically perform transfers between peripherals and memory as the peripheral is ready to transfer more data. some features of the dma controller include the following (this is not an exhaustive list): ? highly flexible and configurable channel operation of up to 32 channels ? transfer modes: memory-to-memory, memory-to-peripheral, peripheral-to-memory, and peripheral-to- peripheral ? data sizes of 8, 16, and 32 bits the aon domain contains circuitry that is always enabled, except for in shutdown (where the digital supply is off). this circuitry includes the following: 28 detailed description copyright ? 2015, texas instruments incorporated submit documentation feedback product folder links: cc2630
cc2630 www.ti.com swrs177 ? february 2015 ? the rtc can be used to wake the device from any state where it is active. the rtc contains three compare and one capture registers. with software support, the rtc can be used for clock and calendar operation. the rtc is clocked from the 32 khz rc oscillator or crystal. the rtc can also be compensated to tick at the correct frequency even when the internal 32 khz rc oscillator is used instead of a crystal. ? the battery monitor and temperature sensor are accessible by software and give a battery status indication as well as a coarse temperature measure. 6.10 system architecture depending on the product configuration, cc26xx can function either as a wireless network processor (wnp ? an ic running the wireless protocol stack, with the application running on a separate mcu), or as a system-on-chip (soc), with the application and protocol stack running on the arm cm3 core inside the device. in the first case, the external host mcu communicates with the device using spi or uart. in the second case, the application must be written according to the application framework supplied with the wireless protocol stack. copyright ? 2015, texas instruments incorporated detailed description 29 submit documentation feedback product folder links: cc2630
cc2630 swrs177 ? february 2015 www.ti.com 7 application circuit note information in the following applications sections is not part of the ti component specification, and ti does not warrant its accuracy or completeness. ti's customers are responsible for determining suitability of components for their purposes. customers should validate and test their design implementation to confirm system functionality. few external components are required for the operation of the cc2630 device. figure 7-1 shows a typical application circuit. for a complete reference design, see the product folder on www.ti.com . figure 7-1. cc2630 application circuit 30 application circuit copyright ? 2015, texas instruments incorporated submit documentation feedback product folder links: cc2630 antenna (50 ohm) 1 pf 1 pf 2.4 nh 2.4-2.7 nh 6.8 pf 6.2-6.8 nh antenna (50 ohm) 1.2 pf 15 nh 2 nh 1.2 pf antenna (50 ohm) 1.2 pf 2 nh 1.2 pf antenna (50 ohm) 1.2 pf 2 nh 1.2 pf pin 1 (rf p) pin 2 (rf n) pin 3 (rxtx) pin 1 (rf p) pin 2 (rf n) pin 1 (rf p) pin 2 (rf n) red = not necessary if internal bias is used red = not necessary if internal bias is used differential operation single ended operation single ended operation with 2 antennas pin 3 (rxtx) 15 nh 15 nh cc 26 xx ( gnd exposed die attached pad ) pin 3/4 (rxtx) pin 1 (rf p) pin 2 (rf n) 24mhz xtal (load caps on chip) 10uf 10uh optional inductor. only needed for dcdc operation 12 pf 12 pf 12 pf 12 pf 2 nh 2 nh 1 pf input decoupling 10uf 22uf to vddr pins vdds_dcdc dcdc_sw red = not necessary if internal bias is used
cc2630 www.ti.com swrs177 ? february 2015 figure 7-2. supply voltage configurations power supply decoupling capacitors are not shown. digital i/os not included. pin positions, and component values are not final. for detailed overview of power supply decoupling and wiring, see the ti reference designs and the cc26xx technical reference manual ( section 8.2 ). figure 7-1 shows that the rf front end can be used both differentially and single-endedly with the option of having internal or external biasing. these options allow for various trade-offs between cost, board- space, and rf performance. differential operation with external bias gives the best performance while single-ended operation with internal bias gives the least amount of external components and the lowest power consumption. copyright ? 2015, texas instruments incorporated application circuit 31 submit documentation feedback product folder links: cc2630 cc 26 xx ( gnd exposed die attached pad ) pin 3/4 (rxtx) pin 1 (rf p) pin 2 (rf n) 24mhz xtal (load caps on chip) 10uf 10uh vdds_dcdc input decoupling 10uf 22uf to all vddr pins vdds_dcdc pin dcdc_sw pin cc 26 xx ( gnd exposed die attached pad ) pin 3/4 (rxtx) pin 1 (rf p) pin 2 (rf n) 24mhz xtal (load caps on chip) 2.2uf 1.7v 1.95v to all vddr- and vdds pins except vdds_dcdc vdds_dcdc pin dcdc_sw pin ext regulator 1.8v 3.8v to all vdds pins internal dcdc regulator external regulator cc 26 xx ( gnd exposed die attached pad ) pin 3/4 (rxtx) pin 1 (rf p) pin 2 (rf n) 24mhz xtal (load caps on chip) vdds_dcdc input decoupling 10uf 22uf to all vddr pins vdds_dcdc pin dcdc_sw pin 1.8v 3.8v supply voltage 10uf nc to all vdds pins internal ldo regulator
cc2630 swrs177 ? february 2015 www.ti.com 8 device and documentation support 8.1 device support 8.1.1 development support ti offers an extensive line of development tools, including tools to evaluate the performance of the processors, generate code, develop algorithm implementations, and fully integrate and debug software and hardware modules. the following products support development of the cc2630 device applications: software tools: smartrf ? studio 7: smartrf studio is a pc application that helps designers of radio systems to easily evaluate the rf-ic at an early stage in the design process. ? test functions for sending and receiving radio packets, continuous wave transmit and receive ? evaluate rf performance on custom boards by wiring it to a supported evaluation board or debugger ? can also be used without any hardware, but then only to generate, edit and export radio configuration settings ? can be used in combination with several development kits for texas instruments ? ccxxxx rf-ics sensor controller studio: sensor controller studio provides a development environment for the cc26xx sensor controller. the sensor controller is a proprietary, power-optimized cpu in the cc26xx, which can perform simple background tasks autonomously and independent of the system cpu state. ? allows for sensor controller task algorithms to be implemented using a c-like programming language ? outputs a sensor controller interface driver, which incorporates the generated sensor controller machine code and associated definitions ? allows for rapid development by using the integrated sensor controller task testing and debugging functionality. this allows for live visualization of sensor data and algorithm verification. ides and compilers: code composer studio: ? integrated development environment with project management tools and editor ? code composer studio (ccs) 6.1 and later has built-in support for the cc26xx device family ? best support for xds debuggers; xds100v3, xds110 and xds200 ? high integration with ti-rtos with support for ti-rtos object view iar embedded workbench for arm ? integrated development environment with project management tools and editor ? iar ewarm 7.30.3 and later has built-in support for the cc26xx device family ? broad debugger support, supporting xds100v3, xds200, iar i-jet and segger j-link ? integrated development environment with project management tools and editor ? rtos plugin available for ti-rtos for a complete listing of development-support tools for the cc2630 platform, visit the texas instruments website at www.ti.com . for information on pricing and availability, contact the nearest ti field sales office or authorized distributor. 32 device and documentation support copyright ? 2015, texas instruments incorporated submit documentation feedback product folder links: cc2630
cc2630 www.ti.com swrs177 ? february 2015 8.1.2 device nomenclature to designate the stages in the product development cycle, ti assigns prefixes to all part numbers and/or date-code. each device has one of three prefixes/identifications: x, p, or null (no prefix) (for example, cc2630 is in production; therefore, no prefix/identification is assigned). device development evolutionary flow: x experimental device that is not necessarily representative of the final device's electrical specifications and may not use production assembly flow. p prototype device that is not necessarily the final silicon die and may not necessarily meet final electrical specifications. null production version of the silicon die that is fully qualified. production devices have been characterized fully, and the quality and reliability of the device have been demonstrated fully. ti's standard warranty applies. predictions show that prototype devices (x or p) have a greater failure rate than the standard production devices. texas instruments recommends that these devices not be used in any production system because their expected end-use failure rate still is undefined. only qualified production devices are to be used. ti device nomenclature also includes a suffix with the device family name. this suffix indicates the package type (for example, rsm ). for orderable part numbers of cc2630 devices in the rsm, rhb or rgz package types, see the package option addendum of this document, the ti website ( www.ti.com ), or contact your ti sales representative. copyright ? 2015, texas instruments incorporated device and documentation support 33 submit documentation feedback product folder links: cc2630
cc2630 swrs177 ? february 2015 www.ti.com 8.2 documentation support the following documents describe the cc2630. copies of these documents are available on the internet at www.ti.com . swcu117 technical reference manual. texas instruments cc26xx family of products swrs058 silicon errata. texas instruments cc26xx ? family of products 8.2.1 community resources the following links connect to ti community resources. linked contents are provided "as is" by the respective contributors. they do not constitute ti specifications and do not necessarily reflect ti's views; see ti's terms of use . ti e2e ? online community ti's engineer-to-engineer (e2e) community. created to foster collaboration among engineers. at e2e.ti.com, you can ask questions, share knowledge, explore ideas and help solve problems with fellow engineers. ti embedded processors wiki texas instruments embedded processors wiki. established to help developers get started with embedded processors from texas instruments and to foster innovation and growth of general knowledge about the hardware and software surrounding these devices. 8.3 additional information texas instruments offers a wide selection of cost-effective, low-power rf solutions for proprietary and standard-based wireless applications for use in industrial and consumer applications. the selection includes rf transceivers, rf transmitters, rf front ends, and systems-on-chips as well as various software solutions for the sub-1-ghz and 2.4-ghz frequency bands. in addition, texas instruments provides a large selection of support collateral such as development tools, technical documentation, reference designs, application expertise, customer support, third-party and university programs. the low-power rf e2e online community provides technical support forums, videos and blogs, and the chance to interact with engineers from all over the world. with a broad selection of product solutions, end-application possibilities, and a range of technical support, texas instruments offers the broadest low-power rf portfolio. 8.3.1 texas instruments low-power rf website texas instruments' low-power rf website has all the latest products, application and design notes, faq section, news and events updates. go to www.ti.com/lprf . 8.3.2 low-power rf online community ? forums, videos, and blogs ? rf design help ? e2e interaction join at: www.ti.com/lprf-forum . 34 device and documentation support copyright ? 2015, texas instruments incorporated submit documentation feedback product folder links: cc2630
cc2630 www.ti.com swrs177 ? february 2015 8.3.3 texas instruments low-power rf developer network texas instruments has launched an extensive network of low-power rf development partners to help customers speed up their application development. the network consists of recommended companies, rf consultants, and independent design houses that provide a series of hardware module products and design services, including: ? rf circuit, low-power rf, and zigbee design services ? low-power rf and zigbee module solutions and development tools ? rf certification services and rf circuit manufacturing for help with modules, engineering services or development tools: search the low-power rf developer network to find a suitable partner. www.ti.com/lprfnetwork 8.3.4 low-power rf enewsletter the low-power rf enewsletter is up-to-date on new products, news releases, developers ? news, and other news and events associated with low-power rf products from ti. the low-power rf enewsletter articles include links to get more online information. sign up at: www.ti.com/lprfnewsletter 8.4 trademarks iar embedded workbench is a registered trademark of iar systems ab. simplelink, smartrf, code composer studio, cc26xx, e2e are trademarks of texas instruments. arm7 is a trademark of arm limited. arm, cortex are registered trademarks of arm limited (or its subsidiaries). arm thumb is a registered trademark of arm limited. coremark is a registered trademark of embedded microprocessor benchmark consortium. ieee std 1241 is a trademark of institute of electrical and electronics engineers, incorporated. zigbee is a registered trademark of zigbee alliance, inc. zigbee is a registered trademark of zigbee alliance, inc. . 8.5 electrostatic discharge caution this integrated circuit can be damaged by esd. texas instruments recommends that all integrated circuits be handled with appropriate precautions. failure to observe proper handling and installation procedures can cause damage. esd damage can range from subtle performance degradation to complete device failure. precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. 8.6 export control notice recipient agrees to not knowingly export or re-export, directly or indirectly, any product or technical data (as defined by the u.s., eu, and other export administration regulations) including software, or any controlled product restricted by other applicable national regulations, received from disclosing party under this agreement, or any direct product of such technology, to any destination to which such export or re- export is restricted or prohibited by u.s. or other applicable laws, without obtaining prior authorization from u.s. department of commerce and other competent government authorities to the extent required by those laws. 8.7 glossary slyz022 ? ti glossary . this glossary lists and explains terms, acronyms and definitions. copyright ? 2015, texas instruments incorporated device and documentation support 35 submit documentation feedback product folder links: cc2630
cc2630 swrs177 ? february 2015 www.ti.com 9 mechanical packaging and orderable information 9.1 packaging information the following pages include mechanical packaging and orderable information. this information is the most current data available for the designated devices. this data is subject to change without notice and revision of this document. for browser-based versions of this data sheet, refer to the left-hand navigation. 36 mechanical packaging and orderable information copyright ? 2015, texas instruments incorporated submit documentation feedback product folder links: cc2630
package option addendum www.ti.com 11-mar-2015 addendum-page 1 packaging information orderable device status (1) package type package drawing pins package qty eco plan (2) lead/ball finish (6) msl peak temp (3) op temp (c) device marking (4/5) samples cc2630f128rgzr active vqfn rgz 48 2500 green (rohs & no sb/br) cu nipdau level-3-260c-168 hr -40 to 85 cc2630 f128 cc2630f128rgzt active vqfn rgz 48 250 green (rohs & no sb/br) cu nipdau level-3-260c-168 hr -40 to 85 cc2630 f128 cc2630f128rhbr active vqfn rhb 32 3000 green (rohs & no sb/br) cu nipdau level-3-260c-168 hr -40 to 85 cc2630 f128 cc2630f128rhbt active vqfn rhb 32 250 green (rohs & no sb/br) cu nipdau level-3-260c-168 hr -40 to 85 cc2630 f128 cc2630f128rsmr active vqfn rsm 32 3000 green (rohs & no sb/br) cu nipdau level-3-260c-168 hr -40 to 85 cc2630 f128 cc2630f128rsmt active vqfn rsm 32 250 green (rohs & no sb/br) cu nipdau level-3-260c-168 hr -40 to 85 cc2630 f128 (1) the marketing status values are defined as follows: active: product device recommended for new designs. lifebuy: ti has announced that the device will be discontinued, and a lifetime-buy period is in effect. nrnd: not recommended for new designs. device is in production to support existing customers, but ti does not recommend using this part in a new design. preview: device has been announced but is not in production. samples may or may not be available. obsolete: ti has discontinued the production of the device. (2) eco plan - the planned eco-friendly classification: pb-free (rohs), pb-free (rohs exempt), or green (rohs & no sb/br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. tbd: the pb-free/green conversion plan has not been defined. pb-free (rohs): ti's terms "lead-free" or "pb-free" mean semiconductor products that are compatible with the current rohs requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. where designed to be soldered at high temperatures, ti pb-free products are suitable for use in specified lead-free processes. pb-free (rohs exempt): this component has a rohs exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. the component is otherwise considered pb-free (rohs compatible) as defined above. green (rohs & no sb/br): ti defines "green" to mean pb-free (rohs compatible), and free of bromine (br) and antimony (sb) based flame retardants (br or sb do not exceed 0.1% by weight in homogeneous material) (3) msl, peak temp. - the moisture sensitivity level rating according to the jedec industry standard classifications, and peak solder temperature. (4) there may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device. (5) multiple device markings will be inside parentheses. only one device marking contained in parentheses and separated by a "~" will appear on a device. if a line is indented then it is a continuation of the previous line and the two combined represent the entire device marking for that device.
package option addendum www.ti.com 11-mar-2015 addendum-page 2 (6) lead/ball finish - orderable devices may have multiple material finish options. finish options are separated by a vertical ruled line. lead/ball finish values may wrap to two lines if the finish value exceeds the maximum column width. important information and disclaimer: the information provided on this page represents ti's knowledge and belief as of the date that it is provided. ti bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. efforts are underway to better integrate information from third parties. ti has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. ti and ti suppliers consider certain information to be proprietary, and thus cas numbers and other limited information may not be available for release. in no event shall ti's liability arising out of such information exceed the total purchase price of the ti part(s) at issue in this document sold by ti to customer on an annual basis.
tape and reel information *all dimensions are nominal device package type package drawing pins spq reel diameter (mm) reel width w1 (mm) a0 (mm) b0 (mm) k0 (mm) p1 (mm) w (mm) pin1 quadrant cc2630f128rgzr vqfn rgz 48 2500 330.0 16.4 7.3 7.3 1.1 12.0 16.0 q2 cc2630f128rgzt vqfn rgz 48 250 180.0 16.4 7.3 7.3 1.1 12.0 16.0 q2 cc2630f128rhbr vqfn rhb 32 3000 330.0 12.4 5.3 5.3 1.1 8.0 12.0 q2 cc2630f128rhbt vqfn rhb 32 250 180.0 12.4 5.3 5.3 1.1 8.0 12.0 q2 cc2630f128rsmr vqfn rsm 32 3000 330.0 12.4 4.25 4.25 1.15 8.0 12.0 q2 cc2630f128rsmt vqfn rsm 32 250 180.0 12.4 4.25 4.25 1.15 8.0 12.0 q2 package materials information www.ti.com 12-mar-2015 pack materials-page 1
*all dimensions are nominal device package type package drawing pins spq length (mm) width (mm) height (mm) cc2630f128rgzr vqfn rgz 48 2500 367.0 367.0 38.0 cc2630f128rgzt vqfn rgz 48 250 210.0 185.0 35.0 cc2630f128rhbr vqfn rhb 32 3000 367.0 367.0 35.0 cc2630f128rhbt vqfn rhb 32 250 210.0 185.0 35.0 cc2630f128rsmr vqfn rsm 32 3000 367.0 367.0 35.0 cc2630f128rsmt vqfn rsm 32 250 210.0 185.0 35.0 package materials information www.ti.com 12-mar-2015 pack materials-page 2

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